Reconfigurable 2T2R ReRAM architecture for versatile data storage and computing in-memory

• Main Authors: Chen, Yuzong, Lu, Lu, Kim, Bongjin, Kim, Tony Tae-Hyoung
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2022
• 主題: Engineering::Electrical and electronic engineering; Computer Architecture; Sensors
• 在線閱讀: https://hdl.handle.net/10356/160501
• 機構: Nanyang Technological University

Nonvolatile memory (NVM)-based computing in-memory (CIM) is a promising solution to data-intensive applications. This work proposes a 2T2R resistive random access memory (ReRAM) architecture that supports three types of CIM operations: 1) ternary content addressable memory (TCAM); 2) logic in-memory...