In situ electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtOₓ/β-Ga₂O₃vertical Schottky barrier diodes
In situ I – V and C – V measurements were performed on Pt/PtOx/ β -Ga2O3 vertical Schottky barrier diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of 1×1010 – 2×1012 ions/cm2. The reverse leakage current density increased from 1.21×10−10 to 1.69×10−4 A/cm2 at −1...
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| Main Authors: | , , , , , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2022
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/163770 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | In situ I – V and C – V measurements were performed on Pt/PtOx/ β -Ga2O3 vertical Schottky barrier diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of 1×1010 – 2×1012 ions/cm2. The reverse leakage current density increased from 1.21×10−10 to 1.69×10−4 A/cm2 at −1 V. The Schottky barrier height (SBH) remains close to ~1.8 eV up to the fluence of 5×1011 ions/cm2, and however, at the fluences of 1×1012 and 2×1012 ions/cm2, the SBH increased to 1.93 and 2.03 eV, respectively. Also, the ideality factor (IF) increased from 1.07 to 1.38. The in situ C – V measurements showed a similar trend, as the SBH decreased from 2.04 to ~1.88 eV until 5×1011 ions/cm2, but it increased to 2.14 and 2.56 eV at 1×1012 and 2×1012 ions/cm2, respectively. In addition, the doping concentration decreased from 1.01×1016 to 0.27×1016 cm −3 as the defects increased significantly at the fluence of 2×1012 ions/cm2. The cathodoluminescence measurements revealed various Ga and O defects produced during SHI irradiation. Cross-sectional transmission electron microscopy measurements confirmed the formation of tracks within β -Ga2O3 along the SHI path, and these results are explained with the inelastic thermal spike model. |
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