In situ electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtOₓ/β-Ga₂O₃vertical Schottky barrier diodes
In situ I – V and C – V measurements were performed on Pt/PtOx/ β -Ga2O3 vertical Schottky barrier diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of 1×1010 – 2×1012 ions/cm2. The reverse leakage current density increased from 1.21×10−10 to 1.69×10−4 A/cm2 at −1...
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| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/163770 |
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| Institution: | Nanyang Technological University |
| Language: | English |