In situ electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtOₓ/β-Ga₂O₃vertical Schottky barrier diodes
In situ I – V and C – V measurements were performed on Pt/PtOx/ β -Ga2O3 vertical Schottky barrier diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of 1×1010 – 2×1012 ions/cm2. The reverse leakage current density increased from 1.21×10−10 to 1.69×10−4 A/cm2 at −1...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2022
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/163770 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| 語言: | English |