In situ electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtOₓ/β-Ga₂O₃vertical Schottky barrier diodes

• Main Authors: Manikanthababu, N., Sheoran, Hardhyan, Prajna, K., Khan, S. A., Asokan, K., Vas, Joseph Vimal, Medwal, R., Panigrahi, B. K., Singh, R.
• 其他作者: School of Materials Science and Engineering
• 格式: Article
• 語言: English
• 出版: 2022
• 主題: Science::Physics; Ions; Radiation Effects
• 在線閱讀: https://hdl.handle.net/10356/163770
• 機構: Nanyang Technological University

In situ I – V and C – V measurements were performed on Pt/PtOx/ β -Ga2O3 vertical Schottky barrier diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of 1×1010 – 2×1012 ions/cm2. The reverse leakage current density increased from 1.21×10−10 to 1.69×10−4 A/cm2 at −1...