Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%

• المؤلفون الرئيسيون: An, Shu, Huang, Yi-Chiau, Wu, Chen-Ying, Huang, Po-Rei, Chang, Guo-En, Lai, Junyu, Seo, Jung-Hun, Kim, Munho
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Heterojunction; Nanomembranes
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/164351

GeSn/Si heterojunction photodiodes are attractive because they can extend light detection wavelength range. However, the development of such photodiodes via epitaxial growth faces great challenges due to unavoidable issues such as lattice and thermal mismatches between Si and GeSn. Here, print Si na...