Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%

GeSn/Si heterojunction photodiodes are attractive because they can extend light detection wavelength range. However, the development of such photodiodes via epitaxial growth faces great challenges due to unavoidable issues such as lattice and thermal mismatches between Si and GeSn. Here, print Si na...

Full description

Saved in:
Bibliographic Details
Main Authors: An, Shu, Huang, Yi-Chiau, Wu, Chen-Ying, Huang, Po-Rei, Chang, Guo-En, Lai, Junyu, Seo, Jung-Hun, Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Online Access:https://hdl.handle.net/10356/164351
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Be the first to leave a comment!
You must be logged in first