Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%
GeSn/Si heterojunction photodiodes are attractive because they can extend light detection wavelength range. However, the development of such photodiodes via epitaxial growth faces great challenges due to unavoidable issues such as lattice and thermal mismatches between Si and GeSn. Here, print Si na...
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Main Authors: | , , , , , , , |
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格式: | Article |
語言: | English |
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2023
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在線閱讀: | https://hdl.handle.net/10356/164351 |
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機構: | Nanyang Technological University |
語言: | English |
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