Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications

• المؤلفون الرئيسيون: Kumar, Harshvardhan, Chen, Qimiao, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; GeSn; Photoresistor
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/164357
• المؤسسة: Nanyang Technological University

This work reports a novel mid-infrared (MIR) lateral Ge1-xSnx (x = 6%) waveguide-based phototransistors (PTs) on a silicon platform. A lateral device structure is proposed to enhance the optical confinement factor (OCF) and the optical power through the i-GeSn waveguide, thereby, increasing the o...