Improving carrier mobility in two-dimensional semiconductors with rippled materials

• Main Authors: Ng, Hong Kuan, Du, Xiang, Suwardi, Ady, Hu, Guangwei, Ke, Yang, Zhao, Yunshan, Liu, Tao, Cao, Zhonghan, Liu, Huajun, Li, Shisheng, Cao, Jing, Zhu, Qiang, Dong, Zhaogang, Tan, Ivan Chee Kiang, Chi, Dongzhi, Qiu, Cheng-Wei, Hippalgaonkar, Kedar, Eda, Goki, Yang, Ming, Wu, Jing
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Materials::Microelectronics and semiconductor materials; Carrier Mobility; Field Effect Transistors
• Online Access: https://hdl.handle.net/10356/164465
• Institution: Nanyang Technological University

Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–...