Memristive switching and density-functional theory calculations in double nitride insulating layers

Memristive switching and density-functional theory calculations in double nitride insulating layers

In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trappin...

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Bibliographic Details
Main Authors: Khan, Sobia Ali, Hussain, Fayyaz, Chung, Daewon, Rahmani, Mehr Khalid, Ismail, Muhammd, Mahata, Chandreswar, Abbas, Yawar, Abbas, Haider, Choi, Changhwan, Mikhaylov, Alexey N., Shchanikov, Sergey A., Yang, Byung-Do, Kim, Sungjun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Resistive Switching
Silicon Nitride
Online Access:https://hdl.handle.net/10356/164533
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.

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