Memristive switching and density-functional theory calculations in double nitride insulating layers

• المؤلفون الرئيسيون: Khan, Sobia Ali, Hussain, Fayyaz, Chung, Daewon, Rahmani, Mehr Khalid, Ismail, Muhammd, Mahata, Chandreswar, Abbas, Yawar, Abbas, Haider, Choi, Changhwan, Mikhaylov, Alexey N., Shchanikov, Sergey A., Yang, Byung-Do, Kim, Sungjun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Resistive Switching; Silicon Nitride
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/164533

In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trappin...