Memristive switching and density-functional theory calculations in double nitride insulating layers

Memristive switching and density-functional theory calculations in double nitride insulating layers

In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trappin...

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Main Authors:	Khan, Sobia Ali, Hussain, Fayyaz, Chung, Daewon, Rahmani, Mehr Khalid, Ismail, Muhammd, Mahata, Chandreswar, Abbas, Yawar, Abbas, Haider, Choi, Changhwan, Mikhaylov, Alexey N., Shchanikov, Sergey A., Yang, Byung-Do, Kim, Sungjun
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2023
主題:	Engineering::Electrical and electronic engineering Resistive Switching Silicon Nitride
在線閱讀:	https://hdl.handle.net/10356/164533
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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