Memristive switching and density-functional theory calculations in double nitride insulating layers

• Main Authors: Khan, Sobia Ali, Hussain, Fayyaz, Chung, Daewon, Rahmani, Mehr Khalid, Ismail, Muhammd, Mahata, Chandreswar, Abbas, Yawar, Abbas, Haider, Choi, Changhwan, Mikhaylov, Alexey N., Shchanikov, Sergey A., Yang, Byung-Do, Kim, Sungjun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; Resistive Switching; Silicon Nitride
• Online Access: https://hdl.handle.net/10356/164533
• Institution: Nanyang Technological University

In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.