Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen

Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) expo...

Full description

Saved in:
Bibliographic Details
Main Authors: Huang, Shiyong, Ng, Zhi Kai, Li, Hongling, Chaturvedi, Apoorva, Lim, Mark Jian Wei, Tay, Roland Yingjie, Teo, Edwin Hang Tong, Xu, Shuyan, Ostrikov, Kostya Ken, Tsang, Siu Hon
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Online Access:https://hdl.handle.net/10356/165129
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-165129
record_format dspace
spelling sg-ntu-dr.10356-1651292023-03-16T15:31:49Z Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen Huang, Shiyong Ng, Zhi Kai Li, Hongling Chaturvedi, Apoorva Lim, Mark Jian Wei Tay, Roland Yingjie Teo, Edwin Hang Tong Xu, Shuyan Ostrikov, Kostya Ken Tsang, Siu Hon School of Electrical and Electronic Engineering School of Materials Science and Engineering National Institute of Education Temasek Laboratories @ NTU Plasma Sources and Applications Center Engineering::Materials Inductively Coupled Plasmas Chemical Vapor Deposition Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O2/Ar/H2 plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices. Published version 2023-03-14T05:50:11Z 2023-03-14T05:50:11Z 2022 Journal Article Huang, S., Ng, Z. K., Li, H., Chaturvedi, A., Lim, M. J. W., Tay, R. Y., Teo, E. H. T., Xu, S., Ostrikov, K. K. & Tsang, S. H. (2022). Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen. Nanomaterials, 12(21), 12213876-. https://dx.doi.org/10.3390/nano12213876 2079-4991 https://hdl.handle.net/10356/165129 10.3390/nano12213876 36364652 2-s2.0-85141866580 21 12 12213876 en Nanomaterials © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Inductively Coupled Plasmas
Chemical Vapor Deposition
spellingShingle Engineering::Materials
Inductively Coupled Plasmas
Chemical Vapor Deposition
Huang, Shiyong
Ng, Zhi Kai
Li, Hongling
Chaturvedi, Apoorva
Lim, Mark Jian Wei
Tay, Roland Yingjie
Teo, Edwin Hang Tong
Xu, Shuyan
Ostrikov, Kostya Ken
Tsang, Siu Hon
Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen
description Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O2/Ar/H2 plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Huang, Shiyong
Ng, Zhi Kai
Li, Hongling
Chaturvedi, Apoorva
Lim, Mark Jian Wei
Tay, Roland Yingjie
Teo, Edwin Hang Tong
Xu, Shuyan
Ostrikov, Kostya Ken
Tsang, Siu Hon
format Article
author Huang, Shiyong
Ng, Zhi Kai
Li, Hongling
Chaturvedi, Apoorva
Lim, Mark Jian Wei
Tay, Roland Yingjie
Teo, Edwin Hang Tong
Xu, Shuyan
Ostrikov, Kostya Ken
Tsang, Siu Hon
author_sort Huang, Shiyong
title Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen
title_short Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen
title_full Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen
title_fullStr Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen
title_full_unstemmed Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen
title_sort stability of wafer-scale thin films of vertically aligned hexagonal bn nanosheets exposed to high-energy ions and reactive atomic oxygen
publishDate 2023
url https://hdl.handle.net/10356/165129
_version_ 1761781238350217216