Characterization on ferroelectric scandium-doped aluminum nitride for memory applications

• المؤلف الرئيسي: Wang, Zichu
• مؤلفون آخرون: Zhang Qing
• التنسيق: Thesis-Master by Coursework
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/166378
• المؤسسة: Nanyang Technological University

Ferroelectric memory is one of the promising candidates to replace FLASH as a new generation of non-volatile memories (NVM), with the advantages of low power consumption, thigh writing and erasing speed and large endurance. With the discovery of ferroelectricity in scandium doped aluminum nitride...