Ge-on-Si avalanche photodiodes with photon trapping nanostructures for sensing and optical quantum applications

• المؤلفون الرئيسيون: Wu, Shaoteng, Zhou, Hao, He, Li, Wang, Zhaozhen, Chen, Qimiao, Zhang, Lin, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Germanium; Avalanche Photodiode; Silicon Photonics; Photon Trapping
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/166601
• المؤسسة: Nanyang Technological University

High-sensitivity Ge/Si avalanche photodiodes (APDs) have recently gained attention for their application in sensing and optical communication due to their low cost and CMOS compatible process. However, compared to commercial III–V compound APDs, Ge/Si APDs usually suffer from the issue of relatively...