Resistive memory, Pt/MoS2/GeS/Ag
In this report is will go through regarding resistive memory the background behind it and how it stand out compared to the rest of the emerging memories in term of it low cost , high speed, simple structure good scalability. Going through an overview of the memory material, switching mode, mechanism...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167613 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this report is will go through regarding resistive memory the background behind it and how it stand out compared to the rest of the emerging memories in term of it low cost , high speed, simple structure good scalability. Going through an overview of the memory material, switching mode, mechanism, endurance, retention and uniformity. Understanding the device Pt/MoS2/GeS/Ag the characteristic show low operation voltage of below 1V. The promising aspect of RRAM and outlook. Finally Reflection. |
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