A 28GHz low-noise amplifier based on 40nm CMOS
This dissertation first introduces the theoretical basis of low-noise amplifiers, which includes active devices in CMOS process, passive devices, common topologies and performance indicators of LNAs. Then the design process of the LNA is introduced, including the selection of bias voltage and act...
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| Other Authors: | |
| Format: | Thesis-Master by Coursework |
| Language: | English |
| Published: |
Nanyang Technological University
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/168047 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This dissertation first introduces the theoretical basis of low-noise amplifiers,
which includes active devices in CMOS process, passive devices, common
topologies and performance indicators of LNAs. Then the design process of the
LNA is introduced, including the selection of bias voltage and active device
parameters, the design of on-chip inductor, the design of reducing noise factor
and the design of matching network. |
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