A 28GHz low-noise amplifier based on 40nm CMOS
This dissertation first introduces the theoretical basis of low-noise amplifiers, which includes active devices in CMOS process, passive devices, common topologies and performance indicators of LNAs. Then the design process of the LNA is introduced, including the selection of bias voltage and act...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis-Master by Coursework |
| Language: | English |
| Published: |
Nanyang Technological University
2023
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/168047 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-168047 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-1680472023-07-04T16:22:08Z A 28GHz low-noise amplifier based on 40nm CMOS Zeng, Haoyang Zheng Yuanjin School of Electrical and Electronic Engineering Technical University of Munich YJZHENG@ntu.edu.sg Engineering This dissertation first introduces the theoretical basis of low-noise amplifiers, which includes active devices in CMOS process, passive devices, common topologies and performance indicators of LNAs. Then the design process of the LNA is introduced, including the selection of bias voltage and active device parameters, the design of on-chip inductor, the design of reducing noise factor and the design of matching network. Master of Science (Integrated Circuit Design) 2023-05-26T02:20:21Z 2023-05-26T02:20:21Z 2023 Thesis-Master by Coursework Zeng, H. (2023). A 28GHz low-noise amplifier based on 40nm CMOS. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/168047 https://hdl.handle.net/10356/168047 en application/pdf Nanyang Technological University |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
Engineering |
| spellingShingle |
Engineering Zeng, Haoyang A 28GHz low-noise amplifier based on 40nm CMOS |
| description |
This dissertation first introduces the theoretical basis of low-noise amplifiers,
which includes active devices in CMOS process, passive devices, common
topologies and performance indicators of LNAs. Then the design process of the
LNA is introduced, including the selection of bias voltage and active device
parameters, the design of on-chip inductor, the design of reducing noise factor
and the design of matching network. |
| author2 |
Zheng Yuanjin |
| author_facet |
Zheng Yuanjin Zeng, Haoyang |
| format |
Thesis-Master by Coursework |
| author |
Zeng, Haoyang |
| author_sort |
Zeng, Haoyang |
| title |
A 28GHz low-noise amplifier based on 40nm CMOS |
| title_short |
A 28GHz low-noise amplifier based on 40nm CMOS |
| title_full |
A 28GHz low-noise amplifier based on 40nm CMOS |
| title_fullStr |
A 28GHz low-noise amplifier based on 40nm CMOS |
| title_full_unstemmed |
A 28GHz low-noise amplifier based on 40nm CMOS |
| title_sort |
28ghz low-noise amplifier based on 40nm cmos |
| publisher |
Nanyang Technological University |
| publishDate |
2023 |
| url |
https://hdl.handle.net/10356/168047 |
| _version_ |
1772827618091991040 |