Development of nitride-based optical phased array at 1092 nm for the optical addressing of ⁸⁸Sr+ Ion

Development of nitride-based optical phased array at 1092 nm for the optical addressing of ⁸⁸Sr+ Ion

Optical phased array (OPA) structures are designed and fabricated for the optical addressing of trapped 88Sr+ ions. Laser light of 1092 nm wavelength corresponding to the 2D3/2 to 2P1/2 of 88Sr+ ion is used, where silicon nitride (SiN) platform with integrated titanium nitride (TiN) thermos-optic he...

Full description

Saved in:
Bibliographic Details
Main Authors: Lim, Yu Dian, Goh, Simon Chun Kiat, Seit, Wen Wei, Zhao, Peng, Guidoni, Luca, Likforman, Jean-Pierre, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering::Microelectronics
Beam Steering
Silicon Photonics
Online Access:https://hdl.handle.net/10356/168666
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:Optical phased array (OPA) structures are designed and fabricated for the optical addressing of trapped 88Sr+ ions. Laser light of 1092 nm wavelength corresponding to the 2D3/2 to 2P1/2 of 88Sr+ ion is used, where silicon nitride (SiN) platform with integrated titanium nitride (TiN) thermos-optic heaters are selected. Beam steering of ~33 µm, which corresponds to ~11.6° steering angle, is obtained by applying 10V on alternative TiN heaters in the 8-Channel OPA structure.

Similar Items