GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching
A double stacked monochalcogenide GeS-based conducting-bridge random access memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved resistive memory characteristics. The IGZO/GeS double layer is found to provide the CBRAM with a markedly improved sub-1V DC set/reset-voltag...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/169146 |
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| Institution: | Nanyang Technological University |
| Language: | English |