Flexible TiN/Ge photodetectors with enhanced responsivity via localized surface plasmon resonance and strain modulation

• المؤلفون الرئيسيون: Kim, You Jin, An, Shu, Liao, Yikai, Huang, Po-Rei, Son, Bongkwon, Tan, Chuan Seng, Chang, Guo-En, Kim, Munho
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Active Regions; Band Gap Energy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/169318

Near infrared (NIR) photodetectors (PDs) have attracted great attention for their applications in the field of optical telecommunication. Ge is one of the most attractive materials for the active region of the NIR PDs due to complementary metal oxide semiconductor (CMOS) compatibility and lower band...