Flexible TiN/Ge photodetectors with enhanced responsivity via localized surface plasmon resonance and strain modulation

• Main Authors: Kim, You Jin, An, Shu, Liao, Yikai, Huang, Po-Rei, Son, Bongkwon, Tan, Chuan Seng, Chang, Guo-En, Kim, Munho
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; Active Regions; Band Gap Energy
• Online Access: https://hdl.handle.net/10356/169318
• Institution: Nanyang Technological University

Near infrared (NIR) photodetectors (PDs) have attracted great attention for their applications in the field of optical telecommunication. Ge is one of the most attractive materials for the active region of the NIR PDs due to complementary metal oxide semiconductor (CMOS) compatibility and lower band...