Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses

Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as w...

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Main Authors: Tai, Yeh-Chen, An, Shu, Huang, Po-Rei, Jheng, Yue-Tong, Lee, Kuo-Chih, Cheng, Hung-Hsiang, Kim, Munho, Chang, Guo-En
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/169320
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spelling sg-ntu-dr.10356-1693202023-07-14T15:39:51Z Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses Tai, Yeh-Chen An, Shu Huang, Po-Rei Jheng, Yue-Tong Lee, Kuo-Chih Cheng, Hung-Hsiang Kim, Munho Chang, Guo-En School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Flexible Photodetectors Midinfrared Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as well as optoelectronic properties. Herein, for the first time, we present the use of transfer-printing techniques to enable a cost-effective, nontoxic GeSn MIR resonant-cavity-enhanced FPDs (RCE-FPDs) with strain-amplified optical responses. A narrow bandgap nontoxic GeSn nanomembrane was employed as the active layer, which was grown on a silicon-on-insulator substrate and then transfer-printed onto a polyethylene terephthalate (PET) substrate, eliminating the unwanted defects and residual compressive strain, to yield the MIR RCE-FPDs. In addition, a vertical cavity was created for the GeSn active layer to enhance the optical responsivity. Under bending conditions, significant tensile strain up to 0.274% was introduced into the GeSn active layer to effectively modulate the band structure, extend the photodetection in the MIR region, and substantially enhance the optical responsivity to 0.292 A W-1 at λ = 1770 nm, corresponding to an enhancement of 323% compared with the device under flat conditions. Moreover, theoretical simulations were performed to confirm the strain effect on the device performance. The results demonstrated high-performance, nontoxic MIR RCE-FPDs for applications in flexible photodetection. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) Published version This work at CCU was supported by the Young Scholar Fellowship Program by the Ministry of Science and Technology of Taiwan (MOST) under Grant no. MOST 111-2636-E-194-002 and MOST 110-2636-E-194-002. The work at Nanyang Technological University was supported by the A*STAR, Singapore, Advanced Manufacturing and Engineering (AME) Young Individual Research Grant (YIRG) under the Project A2084c0066, and Ministry of Education, Singapore, under the Grant ACRF Tier 2 grant (T2EP50120-0001) and Tier 1-2020-T1- 002-020 (RG136/20). The authors also acknowledge the support of the Nanyang NanoFabrication Centre (N2FC). 2023-07-12T06:47:26Z 2023-07-12T06:47:26Z 2023 Journal Article Tai, Y., An, S., Huang, P., Jheng, Y., Lee, K., Cheng, H., Kim, M. & Chang, G. (2023). Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses. Nanoscale, 15(17), 7745-7754. https://dx.doi.org/10.1039/d2nr07107j 2040-3364 https://hdl.handle.net/10356/169320 10.1039/d2nr07107j 37000582 2-s2.0-85152103773 17 15 7745 7754 en A2084c0066 T2EP50120-0001 2020-T1-002-020 (RG136/20) Nanoscale © 2023 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Flexible Photodetectors
Midinfrared
spellingShingle Engineering::Electrical and electronic engineering
Flexible Photodetectors
Midinfrared
Tai, Yeh-Chen
An, Shu
Huang, Po-Rei
Jheng, Yue-Tong
Lee, Kuo-Chih
Cheng, Hung-Hsiang
Kim, Munho
Chang, Guo-En
Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
description Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as well as optoelectronic properties. Herein, for the first time, we present the use of transfer-printing techniques to enable a cost-effective, nontoxic GeSn MIR resonant-cavity-enhanced FPDs (RCE-FPDs) with strain-amplified optical responses. A narrow bandgap nontoxic GeSn nanomembrane was employed as the active layer, which was grown on a silicon-on-insulator substrate and then transfer-printed onto a polyethylene terephthalate (PET) substrate, eliminating the unwanted defects and residual compressive strain, to yield the MIR RCE-FPDs. In addition, a vertical cavity was created for the GeSn active layer to enhance the optical responsivity. Under bending conditions, significant tensile strain up to 0.274% was introduced into the GeSn active layer to effectively modulate the band structure, extend the photodetection in the MIR region, and substantially enhance the optical responsivity to 0.292 A W-1 at λ = 1770 nm, corresponding to an enhancement of 323% compared with the device under flat conditions. Moreover, theoretical simulations were performed to confirm the strain effect on the device performance. The results demonstrated high-performance, nontoxic MIR RCE-FPDs for applications in flexible photodetection.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tai, Yeh-Chen
An, Shu
Huang, Po-Rei
Jheng, Yue-Tong
Lee, Kuo-Chih
Cheng, Hung-Hsiang
Kim, Munho
Chang, Guo-En
format Article
author Tai, Yeh-Chen
An, Shu
Huang, Po-Rei
Jheng, Yue-Tong
Lee, Kuo-Chih
Cheng, Hung-Hsiang
Kim, Munho
Chang, Guo-En
author_sort Tai, Yeh-Chen
title Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
title_short Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
title_full Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
title_fullStr Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
title_full_unstemmed Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
title_sort transfer-printing-enabled gesn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
publishDate 2023
url https://hdl.handle.net/10356/169320
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