Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciti...
Saved in:
Main Authors: | , , , , , , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2023
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/169766 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-169766 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-1697662023-08-04T15:40:14Z Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors Moutanabbir, Oussama Assali, Simone Gong, Xiao O'Reilly, Eoin Broderick, Chris A. Marzban, Bahareh Witzens, Jeremy Du, Wei Yu, Shui-Qing Chelnokov, Alexei Buca, Dan Nam, Donguk School of Electrical and Electronic Engineering Engineering::Materials::Photonics and optoelectronics materials Chemical Sensors Heterojunctions (Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing serious limitations that need to be addressed to enable reliable and scalable applications. The main outstanding challenges include the difficulty to grow high crystalline quality layers and heterostructures at the desired Sn content and lattice strain, preserve the material integrity during growth and throughout device processing steps, and control doping and defect density. Other challenges are related to the lack of optimized device designs and predictive theoretical models to evaluate and simulate the fundamental properties and performance of (Si)GeSn layers and heterostructures. This Perspective highlights key strategies to circumvent these hurdles and bring this material system to maturity to create far-reaching new opportunities for Si-compatible infrared photodetectors, sensors, and emitters for applications in free-space communication, infrared harvesting, biological and chemical sensing, and thermal imaging. National Research Foundation (NRF) Published version O. Moutanabbir acknowledges the support from NSERC Canada (Discovery, SPG, and CRD Grants), Canada Research Chairs, Canada Foundation for Innovation, Mitacs, PRIMA Quebec, and Defence Canada (Innovation for Defence Excellence and Security, IDEaS). E. O’Reilly and C. Broderick acknowledge the support of Science Foundation Ireland (SFI; Project No. 15/IA/3082) and the National University of Ireland (Post-Doctoral Fellowship in the Sciences to C.B.). D. Buca, J. Witzens, and B. Marzban gratefully acknowledge funding from the “Deutsche Forschungsgemeinschaft” for Grant No. 299480227. D. Nam acknowledges the support from the National Research Foundation of Singapore through the Competitive Research Program (No. NRF-CRP19–2017-01). S.-Q. Yu acknowledges the financial support from the Air Force Office of Scientific Research (AFOSR) (Grant Nos. FA9550–18-1–0045 and FA9550–19-1–0341). A. Chelnokov acknowledges AAPG and Carnot grants by the French ANR. 2023-08-03T02:30:40Z 2023-08-03T02:30:40Z 2021 Journal Article Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S., Chelnokov, A., Buca, D. & Nam, D. (2021). Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502-. https://dx.doi.org/10.1063/5.0043511 0003-6951 https://hdl.handle.net/10356/169766 10.1063/5.0043511 2-s2.0-85102982693 11 118 110502 en NRF-CRP19-2017-01 15/IA/3082 299480227 FA9550-18-1-0045 FA9950-19-1-0341 Applied Physics Letters © 2021 Author(s). All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Citation of published article] and may be found at https://doi.org/10.1063/5.0043511. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
Engineering::Materials::Photonics and optoelectronics materials Chemical Sensors Heterojunctions |
spellingShingle |
Engineering::Materials::Photonics and optoelectronics materials Chemical Sensors Heterojunctions Moutanabbir, Oussama Assali, Simone Gong, Xiao O'Reilly, Eoin Broderick, Chris A. Marzban, Bahareh Witzens, Jeremy Du, Wei Yu, Shui-Qing Chelnokov, Alexei Buca, Dan Nam, Donguk Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors |
description |
(Si)GeSn semiconductors are finally coming of age after a long gestation
period. The demonstration of device quality epi-layers and quantum-engineered
heterostructures has meant that tunable all-group IV Si-integrated infrared
photonics is now a real possibility. Notwithstanding the recent exciting
developments in (Si)GeSn materials and devices, this family of semiconductors
is still facing serious limitations that need to be addressed to enable
reliable and scalable applications. The main outstanding challenges include the
difficulty to grow high crystalline quality layers and heterostructures at the
desired Sn content and lattice strain, preserve the material integrity during
growth and throughout device processing steps, and control doping and defect
density. Other challenges are related to the lack of optimized device designs
and predictive theoretical models to evaluate and simulate the fundamental
properties and performance of (Si)GeSn layers and heterostructures. This
Perspective highlights key strategies to circumvent these hurdles and bring
this material system to maturity to create far-reaching new opportunities for
Si-compatible infrared photodetectors, sensors, and emitters for applications
in free-space communication, infrared harvesting, biological and chemical
sensing, and thermal imaging. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Moutanabbir, Oussama Assali, Simone Gong, Xiao O'Reilly, Eoin Broderick, Chris A. Marzban, Bahareh Witzens, Jeremy Du, Wei Yu, Shui-Qing Chelnokov, Alexei Buca, Dan Nam, Donguk |
format |
Article |
author |
Moutanabbir, Oussama Assali, Simone Gong, Xiao O'Reilly, Eoin Broderick, Chris A. Marzban, Bahareh Witzens, Jeremy Du, Wei Yu, Shui-Qing Chelnokov, Alexei Buca, Dan Nam, Donguk |
author_sort |
Moutanabbir, Oussama |
title |
Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors |
title_short |
Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors |
title_full |
Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors |
title_fullStr |
Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors |
title_full_unstemmed |
Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors |
title_sort |
monolithic infrared silicon photonics: the rise of (si)gesn semiconductors |
publishDate |
2023 |
url |
https://hdl.handle.net/10356/169766 |
_version_ |
1773551348589002752 |