Ultrafast electronic relaxation dynamics of atomically thin MoS₂ is accelerated by wrinkling

• Main Authors: Xu, Ce, Zhou, Guoqing, Alexeev, Evgeny M., Cadore, Alisson R., Paradisanos, Ioannis, Ott, Anna K., Soavi, Giancarlo, Tongay, Sefaattin, Cerullo, Giulio, Ferrari, Andrea C., Prezhdo, Oleg V., Loh, Zhi-Heng
• Other Authors: School of Chemistry, Chemical Engineering and Biotechnology
• Format: Article
• Language: English
• Published: 2023
• Subjects: Science::Chemistry::Physical chemistry; Transition Metal Dichalcogenides; Ultrafast Carrier Dynamics
• Online Access: https://hdl.handle.net/10356/169981
• Institution: Nanyang Technological University

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is s...