Ultrafast electronic relaxation dynamics of atomically thin MoS₂ is accelerated by wrinkling

• المؤلفون الرئيسيون: Xu, Ce, Zhou, Guoqing, Alexeev, Evgeny M., Cadore, Alisson R., Paradisanos, Ioannis, Ott, Anna K., Soavi, Giancarlo, Tongay, Sefaattin, Cerullo, Giulio, Ferrari, Andrea C., Prezhdo, Oleg V., Loh, Zhi-Heng
• مؤلفون آخرون: School of Chemistry, Chemical Engineering and Biotechnology
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Science::Chemistry::Physical chemistry; Transition Metal Dichalcogenides; Ultrafast Carrier Dynamics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/169981
• المؤسسة: Nanyang Technological University

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is s...