Forming-free, self-compliance WTe₂-based conductive bridge RAM with highly uniform multilevel switching for high-density memory

In this work, forming-free and self-limited resistive switching characteristics are demonstrated in the transition-metal-chalcogenide-based conductive bridge RAM devices. Owing to the choice of a suitable solid electrolyte, the proposed WTe2-based devices present excellent switching characteristics...

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Bibliographic Details
Main Authors: Abbas, Haider, Ali, Asif, Li, Jiayi, Tun, Thaw Tint Te, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Online Access:https://hdl.handle.net/10356/170124
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Institution: Nanyang Technological University
Language: English
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