Design of an ultra-low-voltage low-power current reference
This dissertation presents a low voltage CMOS current reference operating in the subthreshold region. Implemented using TSMC-40 nm process technology, it consumes 0.48 μW at a supply voltage of 0.4 V, with an average output current of 298.2nA. The design incorporates frequency compensation and tempe...
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2023
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sg-ntu-dr.10356-1704652023-09-15T15:42:21Z Design of an ultra-low-voltage low-power current reference He, Xinyu Chan Pak Kwong School of Electrical and Electronic Engineering epkchan@ntu.edu.sg Engineering::Electrical and electronic engineering This dissertation presents a low voltage CMOS current reference operating in the subthreshold region. Implemented using TSMC-40 nm process technology, it consumes 0.48 μW at a supply voltage of 0.4 V, with an average output current of 298.2nA. The design incorporates frequency compensation and temperature compensation to achieve lower temperature coefficient. By employing piecewise compensation, this circuit achieves a temperature coefficient of 18.19 ppm/℃ in the TT corner. Furthermore, in the Monte-Carlo simulation, the mean T.C. is 33.8 ppm/℃, and the process sensitivity is 7.2% under 100 samples. The circuit operates within a temperature range of -20℃ to 80℃.This has demonstrated robust temperature insensitivity. The Figure-of-Merit for total output current variation is 0.25%, surpassing other MOSFET current reference circuits. With its low supply voltage and low T.C., the proposed work is suitable for portable and implantable medical applications with strict requirements. Master of Science (Electronics) 2023-09-13T00:45:29Z 2023-09-13T00:45:29Z 2023 Thesis-Master by Coursework He, X. (2023). Design of an ultra-low-voltage low-power current reference. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/170465 https://hdl.handle.net/10356/170465 en application/pdf Nanyang Technological University |
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Engineering::Electrical and electronic engineering He, Xinyu Design of an ultra-low-voltage low-power current reference |
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This dissertation presents a low voltage CMOS current reference operating in the subthreshold region. Implemented using TSMC-40 nm process technology, it consumes 0.48 μW at a supply voltage of 0.4 V, with an average output current of 298.2nA. The design incorporates frequency compensation and temperature compensation to achieve lower temperature coefficient. By employing piecewise compensation, this circuit achieves a temperature coefficient of 18.19 ppm/℃ in the TT corner. Furthermore, in the Monte-Carlo simulation, the mean T.C. is 33.8 ppm/℃, and the process sensitivity
is 7.2% under 100 samples. The circuit operates within a temperature range of -20℃ to 80℃.This has demonstrated robust temperature insensitivity. The Figure-of-Merit for total output current variation is 0.25%, surpassing other MOSFET current reference circuits. With its low supply voltage and low T.C., the proposed work is suitable for portable and implantable medical applications with strict requirements. |
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Chan Pak Kwong |
author_facet |
Chan Pak Kwong He, Xinyu |
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Thesis-Master by Coursework |
author |
He, Xinyu |
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He, Xinyu |
title |
Design of an ultra-low-voltage low-power current reference |
title_short |
Design of an ultra-low-voltage low-power current reference |
title_full |
Design of an ultra-low-voltage low-power current reference |
title_fullStr |
Design of an ultra-low-voltage low-power current reference |
title_full_unstemmed |
Design of an ultra-low-voltage low-power current reference |
title_sort |
design of an ultra-low-voltage low-power current reference |
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Nanyang Technological University |
publishDate |
2023 |
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https://hdl.handle.net/10356/170465 |
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1779156454939295744 |