Characterization of gallium nitride materials for high-frequency and high-power devices

• المؤلف الرئيسي: Yusuf Anindita Wibawa.
• مؤلفون آخرون: K Radhakrishnan
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Materials::Material testing and characterization
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17065
• المؤسسة: Nanyang Technological University

In recent years, a significant progress has been made in the development of III-V Nitrides based devices. Materials such as Aluminium Nitride, Gallium Nitride, Indium Nitride and their alloys have been attractive due to the wide band-gap characteristic. AlGaN/GaN based heterostructures are consi...