Si nanowire based NVM : SONOS fabrication & characterization

• Main Author: Chen, Mincong.
• Other Authors: Yu Hongyu
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/17073
• Institution: Nanyang Technological University

A gate-all-around (GAA) non-volatile memory (NVM) SONOS fabricated on a vertical Si nanowire using CMOS compatible technology. Si vertical nanowires with height of 800nm and diameter as small as 20nm were explored. Without advanced lithography technology, the surrounding gate length can be controlle...