Si nanowire based NVM : SONOS fabrication & characterization

• 主要作者: Chen, Mincong.
• 其他作者: Yu Hongyu
• 格式: Final Year Project
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: http://hdl.handle.net/10356/17073
• 機構: Nanyang Technological University

A gate-all-around (GAA) non-volatile memory (NVM) SONOS fabricated on a vertical Si nanowire using CMOS compatible technology. Si vertical nanowires with height of 800nm and diameter as small as 20nm were explored. Without advanced lithography technology, the surrounding gate length can be controlle...