InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC

• المؤلفون الرئيسيون: Bosch, Julien, Valera, Lucie, Mastropasqua, Chiara, Michon, Adrien, Nemoz, Maud, Portail, Marc, Zúñiga-Pérez, Jesús, Tchernycheva, Maria, Alloing, Blandine, Durand, Christophe
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Science::Physics; Graphene; Quantum Wells
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/172218
• المؤسسة: Nanyang Technological University

In recent years, flexible nitride LEDs have been developed for applications in fields such as lighting, displays but also medicine and biology. Said nanowire-based flexible LEDs are made of InGaN/GaN core-shell nanowires encapsulated in a polymer matrix, which is peeled off and constitutes the final...