High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths
We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic– photonic integrated circuits (EPICs) operating at telecommunication wavelengths. The GeOI samples were fabricated using layer transfer and wafer-bonding techniques, and a high-quality Ge ac...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/173591 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | We report high-performance germanium-on-insulator
(GeOI) waveguide photodetectors (WGPDs) for electronic–
photonic integrated circuits (EPICs) operating at
telecommunication wavelengths. The GeOI samples were
fabricated using layer transfer and wafer-bonding techniques,
and a high-quality Ge active layer was achieved.
Planar lateral p-i-n WGPDs were fabricated and characterized,
and they exhibited a low dark current of
0.1 μA. Strain-induced alterations in the optical properties
were observed, resulting in an extended photodetection
range up to λ =1638 nm. This range encompasses
crucial telecommunication bands. The WGPDs exhibited
a high responsivity of 0.56A/W and a high detectivity
of D∗ = 1.87 × 109cmHz1/2W- 1 at 1550 nm. A frequencyresponse
analysis revealed that increasing the bias voltage
from −1 to −9V enhances the 3-dB bandwidth from 31 to
49 MHz. This study offers a comprehensive understanding
of GeOI WGPDs, fostering high-performance EPICs with
implications for telecommunications and beyond. |
|---|