Conductive bridge random access memory
This paper outlines an exploration into the electrical behavior of conductive bridge random-access memory (CBRAM), featuring a Silver (Ag) top electrode (TE), with the switching layer comprised of Germanium Sulfide (GeS) and Molybdenum Disulfide (MoS2), while the bottom electrode (BE) utilises...
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
Nanyang Technological University
2024
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/176304 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | This paper outlines an exploration into the electrical behavior of conductive bridge
random-access memory (CBRAM), featuring a Silver (Ag) top electrode (TE), with the
switching layer comprised of Germanium Sulfide (GeS) and Molybdenum Disulfide
(MoS2), while the bottom electrode (BE) utilises Platinum (Pt). The addition of MoS2
layer, which is a semiconducting 2D transition metal dichalcogenide (TMDs), has ion
modulation properties which increases reliability of GeS-based CBRAM. The
experimental results show bipolar resistive switching at higher compliance current (Icc)
and threshold resistive switching at lower Icc. It also achieved Ion/Ioff ratio of 10^7, making it a great candidate for memory devices. |
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