Conductive bridge random access memory
This paper outlines an exploration into the electrical behavior of conductive bridge random-access memory (CBRAM), featuring a Silver (Ag) top electrode (TE), with the switching layer comprised of Germanium Sulfide (GeS) and Molybdenum Disulfide (MoS2), while the bottom electrode (BE) utilises...
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| 主要作者: | |
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
Nanyang Technological University
2024
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/176304 |
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