Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices

Microelectromechanical systems (MEMS) and nanoelectromechanical systems have been given much attention in recent years. Characterizations of piezoelectric materials are needed to analyze the properties of such materials. However, the piezoelectric properties of thin films have not been sufficiently...

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Main Author: Wei, Samuel Maozhe.
Other Authors: Zhu Weiguang
Format: Final Year Project
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/17785
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-177852023-07-07T17:09:11Z Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices Wei, Samuel Maozhe. Zhu Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Control and instrumentation::Control engineering Microelectromechanical systems (MEMS) and nanoelectromechanical systems have been given much attention in recent years. Characterizations of piezoelectric materials are needed to analyze the properties of such materials. However, the piezoelectric properties of thin films have not been sufficiently investigated due to the lack of a widely accepted standard of characterization and the lack of reliable method for piezoelectric characterization. Different characterization systems, such as scanning laser Doppler vibrometer, single beam laser interferometer, double beam inteferometric system and scanning laser interferometer, had been devised to measure the displacement of the small vibrations. In this project, a scanning laser interferometer will be built. The advantages of the scanning laser interferometer include having high resolution, of up to 10-2 Å, and also the ability to measure the true displacement of the vibrations of the film, by producing a line scan of the sample. Five samples, of PZT/NZFO composite thick films, are fabricated using sol-gel processing and spin coating technique during the process of the Final Year Project. These five samples are then characterized to investigate the effect of PZT mass fraction on microstructure, magnetic, ferroelectric and dielectric properties. One of the samples, PZT-2, shows potentials to be a candidate for multifunctional application, with saturated magnetization and remnant polarization reaching 4.3emu/cc and 13.9μC/cm2 respectively, and with a dielectric permittivity of 230. During the course of the project, the author had encountered several problems when aligning the optical path of the scanning laser interferometer. This report will also discuss solutions the author implemented to overcome these obstacles. Bachelor of Engineering 2009-06-15T01:53:59Z 2009-06-15T01:53:59Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/17785 en Nanyang Technological University 92 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Control and instrumentation::Control engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Control and instrumentation::Control engineering
Wei, Samuel Maozhe.
Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices
description Microelectromechanical systems (MEMS) and nanoelectromechanical systems have been given much attention in recent years. Characterizations of piezoelectric materials are needed to analyze the properties of such materials. However, the piezoelectric properties of thin films have not been sufficiently investigated due to the lack of a widely accepted standard of characterization and the lack of reliable method for piezoelectric characterization. Different characterization systems, such as scanning laser Doppler vibrometer, single beam laser interferometer, double beam inteferometric system and scanning laser interferometer, had been devised to measure the displacement of the small vibrations. In this project, a scanning laser interferometer will be built. The advantages of the scanning laser interferometer include having high resolution, of up to 10-2 Å, and also the ability to measure the true displacement of the vibrations of the film, by producing a line scan of the sample. Five samples, of PZT/NZFO composite thick films, are fabricated using sol-gel processing and spin coating technique during the process of the Final Year Project. These five samples are then characterized to investigate the effect of PZT mass fraction on microstructure, magnetic, ferroelectric and dielectric properties. One of the samples, PZT-2, shows potentials to be a candidate for multifunctional application, with saturated magnetization and remnant polarization reaching 4.3emu/cc and 13.9μC/cm2 respectively, and with a dielectric permittivity of 230. During the course of the project, the author had encountered several problems when aligning the optical path of the scanning laser interferometer. This report will also discuss solutions the author implemented to overcome these obstacles.
author2 Zhu Weiguang
author_facet Zhu Weiguang
Wei, Samuel Maozhe.
format Final Year Project
author Wei, Samuel Maozhe.
author_sort Wei, Samuel Maozhe.
title Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices
title_short Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices
title_full Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices
title_fullStr Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices
title_full_unstemmed Scanning inteferometer for characterization of piezoelectric thin films and MEMS devices
title_sort scanning inteferometer for characterization of piezoelectric thin films and mems devices
publishDate 2009
url http://hdl.handle.net/10356/17785
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