Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning

• المؤلفون الرئيسيون: Razeen, Ahmed S., Kotekar-Patil, Dharmraj, Jiang, Mengting, Tang, Eric X., Yuan, Gao, Ong, Jesper, Wyen, Viet C., Radhakrishnan, K., Tripathy, Sudhiranjan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Nanoholes; Nanophotonics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/178704
• المؤسسة: Nanyang Technological University

AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high-performance Ultraviolet photodetectors (UV PDs), especially using the metal-semiconductor-metal (MSM) configuration. However, the metal lay...