Ohmic contact formation to β-Ga2O3 nanosheet transistors with Ar-containing plasma treatment

Ohmic contact formation to β-Ga2O3 nanosheet transistors with Ar-containing plasma treatment

Effective Ohmic contact between metals and their conductive channels is a crucial step in developing high-performance Ga2O3-based transistors. Distinct from bulk materials, excess thermal energy of the annealing process can destroy the low-dimensional material itself. Given the thermal budget concer...

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Bibliographic Details
Main Authors: Chen, Jinxin, Liu, Bingyan, Gu, Yang, Li, Bin
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
Subjects:
Engineering
Ohmic contact
X-ray photoemission spectroscopy
Online Access:https://hdl.handle.net/10356/181543
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/181543

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