Ohmic contact formation to β-Ga2O3 nanosheet transistors with Ar-containing plasma treatment

• المؤلفون الرئيسيون: Chen, Jinxin, Liu, Bingyan, Gu, Yang, Li, Bin
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Ohmic contact; X-ray photoemission spectroscopy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/181543
• المؤسسة: Nanyang Technological University

Effective Ohmic contact between metals and their conductive channels is a crucial step in developing high-performance Ga2O3-based transistors. Distinct from bulk materials, excess thermal energy of the annealing process can destroy the low-dimensional material itself. Given the thermal budget concer...