Ohmic contact formation to β-Ga2O3 nanosheet transistors with Ar-containing plasma treatment
Effective Ohmic contact between metals and their conductive channels is a crucial step in developing high-performance Ga2O3-based transistors. Distinct from bulk materials, excess thermal energy of the annealing process can destroy the low-dimensional material itself. Given the thermal budget concer...
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| Main Authors: | , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2024
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| 在線閱讀: | https://hdl.handle.net/10356/181543 |
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| 機構: | Nanyang Technological University |
| 語言: | English |