Integration of high-κ native oxides of gallium for two-dimensional transistors
The deposition of a metal oxide layer with good dielectric properties is a critical step in fabricating the gate dielectric of transistors based on two-dimensional semiconductors. However, current techniques for depositing ultrathin metal oxide layers on two-dimensional semiconductors suffer from qu...
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Main Authors: | , , , , , , , , , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2025
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/182941 |
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Institution: | Nanyang Technological University |
Language: | English |