Integration of high-κ native oxides of gallium for two-dimensional transistors

• Main Authors: Yi, Kongyang, Qin, Wen, Huang, Yamin, Wu, Yao, Feng, Shaopeng, Fang, Qiyi, Cao, Xun, Deng, Ya, Zhu, Chao, Zou, Xilu, Ang, Kah-Wee, Li, Taotao, Wang, Xinran, Lou, Jun, Lai, Keji, Hu, Zhili, Zhang, Zhuhua, Dong, Yemin, Kalantar-Zadeh, Kourosh, Liu, Zheng
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2025
• Subjects: Engineering; Dielectrics property; Metal oxide layers
• Online Access: https://hdl.handle.net/10356/182941
• Institution: Nanyang Technological University

The deposition of a metal oxide layer with good dielectric properties is a critical step in fabricating the gate dielectric of transistors based on two-dimensional semiconductors. However, current techniques for depositing ultrathin metal oxide layers on two-dimensional semiconductors suffer from qu...