Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
In this project, Silicon and Silicon Carbide diodes were studied and tested by varying certain parameters. Recently, there has been a tremendous progress in fabricating silicon carbide wafers and this made it feasible to build power devices of reasonable current density.
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/18978 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this project, Silicon and Silicon Carbide diodes were studied and
tested by varying certain parameters. Recently, there has been a tremendous
progress in fabricating silicon carbide wafers and this made it feasible to build
power devices of reasonable current density. |
|---|