Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes

Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes

In this project, Silicon and Silicon Carbide diodes were studied and tested by varying certain parameters. Recently, there has been a tremendous progress in fabricating silicon carbide wafers and this made it feasible to build power devices of reasonable current density.

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Bibliographic Details
Main Author: Lam, Wilfred Yi Heng.
Other Authors: Tseng King Jet
Format: Final Year Project
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Online Access:http://hdl.handle.net/10356/18978
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-18978
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spelling sg-ntu-dr.10356-189782023-07-07T15:48:24Z Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes Lam, Wilfred Yi Heng. Tseng King Jet School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Power electronics In this project, Silicon and Silicon Carbide diodes were studied and tested by varying certain parameters. Recently, there has been a tremendous progress in fabricating silicon carbide wafers and this made it feasible to build power devices of reasonable current density. Bachelor of Engineering 2009-08-26T04:21:03Z 2009-08-26T04:21:03Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/18978 en Nanyang Technological University 81 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Power electronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Lam, Wilfred Yi Heng.
Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
description In this project, Silicon and Silicon Carbide diodes were studied and tested by varying certain parameters. Recently, there has been a tremendous progress in fabricating silicon carbide wafers and this made it feasible to build power devices of reasonable current density.
author2 Tseng King Jet
author_facet Tseng King Jet
Lam, Wilfred Yi Heng.
format Final Year Project
author Lam, Wilfred Yi Heng.
author_sort Lam, Wilfred Yi Heng.
title Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
title_short Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
title_full Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
title_fullStr Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
title_full_unstemmed Energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
title_sort energy efficient and high temperature power semiconductors - comparison of silicon and silicon-carbide diodes
publishDate 2009
url http://hdl.handle.net/10356/18978
_version_ 1772826978579120128

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