Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes

• المؤلف الرئيسي: Kumta Amit Sudhakar
• مؤلفون آخرون: Rusli
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/19273
• المؤسسة: Nanyang Technological University

In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is...