Characterization of III-V semiconductor materials using rocking curve simulations

A windows-based simulation program using Borland C++, named Dynamical Simulation of X-ray Rocking Curves (DSRC), has been developed to calculate high resolution rocking curves for epitaxial layer structures using the fundamental X-ray scattering equations of dynamical diffraction. A bottom-up approa...

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Main Author: Wei, Ya Fei.
Other Authors: Kam, Chan Hin
Format: Theses and Dissertations
Language:English
Published: 2009
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Online Access:http://hdl.handle.net/10356/19560
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-195602023-07-04T15:30:03Z Characterization of III-V semiconductor materials using rocking curve simulations Wei, Ya Fei. Kam, Chan Hin School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors A windows-based simulation program using Borland C++, named Dynamical Simulation of X-ray Rocking Curves (DSRC), has been developed to calculate high resolution rocking curves for epitaxial layer structures using the fundamental X-ray scattering equations of dynamical diffraction. A bottom-up approach has been used to calculate rocking curve reflectivities for multilayer structures, wherein, starting from the bottom of the substrate, where the reflectivity is assumed zero, it is possible to calculate the reflectivity at the top of the multilayer structure by solving Takagi-Taupin equations. For multilayer structures showing complicated rocking curves, a simulation of the rocking curve has been found to provide a more accurate interpretation by comparing with the corresponding experimental rocking curve. Initial data from experimental rocking curves are used to calculate rocking curves for the multilayer structure and then compared with experimental curves. The input data are slightly adjusted about their initial values until a reasonable fit with experimental curves is achieved. The initial data consist of the knowledge of the thickness and mismatch variations of each layer in the multilayer structure. An accurate interpretation of layer characteristics from such a simulated fit has thus been made possible. Master of Engineering 2009-12-14T06:15:17Z 2009-12-14T06:15:17Z 1998 1998 Thesis http://hdl.handle.net/10356/19560 en NANYANG TECHNOLOGICAL UNIVERSITY 181 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Wei, Ya Fei.
Characterization of III-V semiconductor materials using rocking curve simulations
description A windows-based simulation program using Borland C++, named Dynamical Simulation of X-ray Rocking Curves (DSRC), has been developed to calculate high resolution rocking curves for epitaxial layer structures using the fundamental X-ray scattering equations of dynamical diffraction. A bottom-up approach has been used to calculate rocking curve reflectivities for multilayer structures, wherein, starting from the bottom of the substrate, where the reflectivity is assumed zero, it is possible to calculate the reflectivity at the top of the multilayer structure by solving Takagi-Taupin equations. For multilayer structures showing complicated rocking curves, a simulation of the rocking curve has been found to provide a more accurate interpretation by comparing with the corresponding experimental rocking curve. Initial data from experimental rocking curves are used to calculate rocking curves for the multilayer structure and then compared with experimental curves. The input data are slightly adjusted about their initial values until a reasonable fit with experimental curves is achieved. The initial data consist of the knowledge of the thickness and mismatch variations of each layer in the multilayer structure. An accurate interpretation of layer characteristics from such a simulated fit has thus been made possible.
author2 Kam, Chan Hin
author_facet Kam, Chan Hin
Wei, Ya Fei.
format Theses and Dissertations
author Wei, Ya Fei.
author_sort Wei, Ya Fei.
title Characterization of III-V semiconductor materials using rocking curve simulations
title_short Characterization of III-V semiconductor materials using rocking curve simulations
title_full Characterization of III-V semiconductor materials using rocking curve simulations
title_fullStr Characterization of III-V semiconductor materials using rocking curve simulations
title_full_unstemmed Characterization of III-V semiconductor materials using rocking curve simulations
title_sort characterization of iii-v semiconductor materials using rocking curve simulations
publishDate 2009
url http://hdl.handle.net/10356/19560
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