Characterization of III-V semiconductor materials using rocking curve simulations
A windows-based simulation program using Borland C++, named Dynamical Simulation of X-ray Rocking Curves (DSRC), has been developed to calculate high resolution rocking curves for epitaxial layer structures using the fundamental X-ray scattering equations of dynamical diffraction. A bottom-up approa...
Saved in:
Main Author: | Wei, Ya Fei. |
---|---|
Other Authors: | Kam, Chan Hin |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/19560 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Heteroepitaxial growth and characterization of lll-V compound semiconductor on silicon
by: Hendrix Tanoto
Published: (2011) -
Low dimensional semiconductor structures MOCVD growth and their characterizations
by: Song, Yi Fei.
Published: (2008) -
Characterization of semiconductor heterostructures
by: Wong, Qihao.
Published: (2012) -
Analysis of semiconductor materials and devices
by: Guo, Boyang.
Published: (2011) -
Characterization of narrow bandgap semiconductors
by: Ding, Xiao Ting
Published: (2012)