Design concerns for EEPROM

The floating gate EEPROM has been a popular choice for semiconductor memories for many years. In this thesis, several areas relating to design concerns of the device have been explored. Phenomena such as charge trapping in tunnel oxide was investigated using the thin oxide MOS capacitor while device...

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Main Author: Tan, Hong Mui.
Other Authors: Tse, Man Siu
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/19691
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-196912023-07-04T15:23:10Z Design concerns for EEPROM Tan, Hong Mui. Tse, Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The floating gate EEPROM has been a popular choice for semiconductor memories for many years. In this thesis, several areas relating to design concerns of the device have been explored. Phenomena such as charge trapping in tunnel oxide was investigated using the thin oxide MOS capacitor while device degradation was invesigaed on the EEPROM cell. Master of Engineering 2009-12-14T06:21:54Z 2009-12-14T06:21:54Z 1995 1995 Thesis http://hdl.handle.net/10356/19691 en NANYANG TECHNOLOGICAL UNIVERSITY 86 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Tan, Hong Mui.
Design concerns for EEPROM
description The floating gate EEPROM has been a popular choice for semiconductor memories for many years. In this thesis, several areas relating to design concerns of the device have been explored. Phenomena such as charge trapping in tunnel oxide was investigated using the thin oxide MOS capacitor while device degradation was invesigaed on the EEPROM cell.
author2 Tse, Man Siu
author_facet Tse, Man Siu
Tan, Hong Mui.
format Theses and Dissertations
author Tan, Hong Mui.
author_sort Tan, Hong Mui.
title Design concerns for EEPROM
title_short Design concerns for EEPROM
title_full Design concerns for EEPROM
title_fullStr Design concerns for EEPROM
title_full_unstemmed Design concerns for EEPROM
title_sort design concerns for eeprom
publishDate 2009
url http://hdl.handle.net/10356/19691
_version_ 1772827112955183104