Modeling of Eeprom
Flotox structure has been a very popular choice for storage device in EEPROM chips. In this project, two aspects of such a structure were studied; the current-voltage characteristics under DC conditions and the transient behavior.
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/19809 |
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| Institution: | Nanyang Technological University |
| Language: | English |